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G40H120DF2 IGBT HY3215W MOSFET price in pakistan Specifications

SKU: 2759647164

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USD200.00 USD223.00

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G40H120DF2 IGBT HY3215W MOSFET price in pakistan SpecificationsType: IGBT + Anti Parallel Diode Marking Code: G40H120DF2 Type of IGBT Channel: N Pc Maximum Power Dissipation: 468 W Vce Maximum Collector Emitter Voltage: 1200 V Vge Maximum Gate Emitter Voltage: 20 V Ic Maximum Collector Current: 40 A @25 VCEsat Collector Emitter saturation Voltage, typ: 2. 4 V @25 VGEth Maximum G E Threshold Voltag: 7 V Tj Maximum Junction Temperature: 175 tr Rise Time, typ: 37 nS Coes Output Capacitance, typ: 220 pF Qg Total Gate

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Description

Specifications

Cleanflight / Betaflight development and tuning

and MFRC522 readers

easy to trace

while the data hold function freezes the display for easy logging in tight spaces

G40H120DF2 IGBT HY3215W MOSFET price in pakistan SpecificationsType: IGBT + Anti Parallel Diode Marking Code: G40H120DF2 Type of IGBT Channel: N Pc Maximum Power Dissipation: 468 W Vce Maximum Collector Emitter Voltage: 1200 V Vge Maximum Gate Emitter Voltage: 20 V Ic Maximum Collector Current: 40 A @25 VCEsat Collector Emitter saturation Voltage, typ: 2. 4 V @25 VGEth Maximum G E Threshold Voltag: 7 V Tj Maximum Junction Temperature: 175 tr Rise Time, typ: 37 nS Coes Output Capacitance, typ: 220 pF Qg Total Gate

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